next five years, the GaN substrate to lead the development trend of LED substrate

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When the monopoly of the pattern of the LED chip core technology in today s America, China led landscape lighting companies how to break the pattern, and complete technology cruci al to promoting LED development is particularly important. Currently, LED substrate categories include sapphire, silicon carbide, silicon, and is called third-generation semiconductor materials GaN.

Compared with conventional substrates, GaN has a band gap, high breakdown voltage, thermal conductivity, electron saturation drift velocity, anti-radiation and strong and good chemical stability and superior features, is so far the theory on the electro-optical, photoelectric conversion efficiency of the highest material system. Today, the GaN substrate obvious performance advantages relative to the substrate such as sapphire, silicon carbide, the biggest problem is that the price is too high.

Thick film substrate products: the products are different specifications of 10 to 50 microns, commonly 20 to 30 microns. Dislocation density of 107cm ~ 3 orders of magnitude, according to the different technical parameters can be divided into two n-type doped semi-insu lating, The n-type doped LED and other optoelectronic devices, mainly used in semi-insulating mainly used in power electronics, microwave devices.

Self-supporting gallium nitride (GaN) substrate: the dislocation density of 105cm-3 orders of magnitude, depending on the technical parameters are divided into three, namely, n-type doped semi-insulating undoped. n-type GaN, mainly used in LED, laser; semi-insulation used in high-power microwave devices, high voltage or high current switch. Undoped namely high purity gallium nitride is widely used in the detector requires the electron density of the material the lower the better. The Navier non-doped GaN products, X-ray (002) half-peak width of 50 seconds, (102) half-peak width of about 80 seconds, the electron mobility of the bulk material is more than 1500cmV-1s-1 at the international forefront of level. Navi is one of the few units of the international production and sales of GaN self-supporting wafers.

HV PE Growth of GaN self-supporting substrate

The HVPE mainly metal gallium, hydrogen chloride, ammonia, metals gallium and hydrogen chloride react to generate gallium chloride, gallium chloride gas at 200 ℃ into this as a raw material, and then by reaction with ammonia on the surface of the substrate turned into GaN. HVPE this generation, the chemical saturation of the surface is very high, so its very fast growth rate, 50 to 100 times faster than the MOCVD growth rate, it is one hour can grow from 200 to 300 microns, in a short time this material into a high-quality GaN, which is one of its characteristics.

In the next five years, GaN prices will drop 10 to 20 times, 4 to 6 inches into the market

LED prevalent fashion, gallium nitride semiconductor light-emitting diodes used in LED lighting has also been surging in China s development. Heteroepitaxy on the homoepitaxial GaN substrate and sapphire substrate, a single sense from a technical pe rspective, the hetero-epitaxial defect density two to three orders of magnitude higher than the homoepitaxial GaN; nitride conductive characteristics of gallium can be made of the vertical structure of the chip, so, the use of wafer area 1.5 times higher than the sapphire; made of the vertical structure of the GaN on the current density can be high, the expectations of a gallium nitride liner on the bottom of the chip can be arrived ten sapphire substrate on the chip. Sorra, the United States, and Japan s NGK has begun to vigorously develop such chips, and has made an important breakthrough to achieve the same brightness GaN substrates produced by LED energy than traditional chips for more than half.

GaN large-scale mass production and lower prices, and the electrodeless lamp epitaxial technology continues to evolve, when the chip current density increased to 5 to 10 times, the use of the advantages of GaN in LED than the sapphire obviously a lot of This is all optimistic about the future direction of development. Expected over the next five years, GaN substrates for LED prices to drop 10 to 20 times, GaN substrates will achieve a significant advantage in the price of units of lumens. We are very confident in the future.

GaN substrates are not completely replace the sapphire substrate

Sapphire substrate according to its unique advantages, as well as the possibility of substantially reducing costs through scale production in the future, will become the mainstream of the LED substrate market in the future for a long time. Xu agreed on a number scale, sapphire must be the mainstream of the future period of time. Different substrate technology development in the segments is not very good. GaN large-scale development in the future will not completely replace the sapphire.

Sapphire substrate has its advantages in brightness, etc. do not ask. Very high requirements of general lighting and luminous intensity requirements of the luminous efficiency, light stability, GaN has its advantages. In particular, the LED as a new light, not to say that the red, green and blue landscape lights, used in the projector, projection lights, car lights, flash and other aspects of the GaN substrate has its absolute advantage.